All Transistors. 2SB444 Datasheet

 

2SB444 Datasheet and Replacement


   Type Designator: 2SB444
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO1
 

 2SB444 Substitution

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2SB444 Datasheet (PDF)

 9.1. Size:203K  inchange semiconductor
 2sb449.pdf pdf_icon

2SB444

isc Silicon PNP Power Transistor 2SB449DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.7V(Max.) @I = -3ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,switching and DC-DCconverters appl

Datasheet: 2SB44 , 2SB440 , 2SB441 , 2SB442 , 2SB442H , 2SB443 , 2SB443A , 2SB443B , S8050 , 2SB444A , 2SB444B , 2SB444H , 2SB445 , 2SB446 , 2SB447 , 2SB448 , 2SB449 .

History: 2SC3058A | GT702A | 2SC2625T4TL | CP704 | BC847BMB | BC846B-G | MMBTA05-AU

Keywords - 2SB444 transistor datasheet

 2SB444 cross reference
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