2SB444B Specs and Replacement
Type Designator: 2SB444B
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO1
2SB444B Substitution
- BJT ⓘ Cross-Reference Search
2SB444B datasheet
isc Silicon PNP Power Transistor 2SB449 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,switching and DC-DC converters appl... See More ⇒
Detailed specifications: 2SB441, 2SB442, 2SB442H, 2SB443, 2SB443A, 2SB443B, 2SB444, 2SB444A, 2SC2073, 2SB444H, 2SB445, 2SB446, 2SB447, 2SB448, 2SB449, 2SB450, 2SB450A
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