2SB460 Specs and Replacement

Type Designator: 2SB460

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO1

 2SB460 Substitution

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2SB460 datasheet

 9.1. Size:208K  inchange semiconductor

 2sb468.pdf pdf_icon

2SB460

isc Silicon PNP Power Transistor 2SB468 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection power output applications.... See More ⇒

Detailed specifications: 2SB457, 2SB457A, 2SB457B, 2SB458, 2SB458A, 2SB458B, 2SB459, 2SB46, TIP42, 2SB460A, 2SB460B, 2SB461, 2SB462, 2SB463, 2SB463B, 2SB463R, 2SB463Y

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