All Transistors. 2SB502A Datasheet

 

2SB502A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB502A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 350 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO66

 2SB502A Transistor Equivalent Substitute - Cross-Reference Search

   

2SB502A Datasheet (PDF)

 ..1. Size:56K  toshiba
2sb502a 2sb503a.pdf

2SB502A

 8.1. Size:215K  inchange semiconductor
2sb502.pdf

2SB502A 2SB502A

isc Silicon PNP Power Transistors 2SB502DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 9.1. Size:42K  sanyo
2sb508.pdf

2SB502A

 9.2. Size:112K  mospec
2sb507.pdf

2SB502A 2SB502A

AAA

 9.3. Size:25K  no
2sb509.pdf

2SB502A

 9.4. Size:161K  jmnic
2sb509.pdf

2SB502A 2SB502A

JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE

 9.5. Size:158K  jmnic
2sb507.pdf

2SB502A 2SB502A

JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

 9.6. Size:236K  lge
2sb507.pdf

2SB502A 2SB502A

2SB507(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base V

 9.7. Size:215K  inchange semiconductor
2sb503.pdf

2SB502A 2SB502A

isc Silicon PNP Power Transistors 2SB503DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 9.8. Size:193K  inchange semiconductor
2sb508.pdf

2SB502A 2SB502A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB508DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD314Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W

 9.9. Size:129K  inchange semiconductor
2sb509.pdf

2SB502A 2SB502A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.10. Size:179K  inchange semiconductor
2sb506.pdf

2SB502A 2SB502A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB506DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifi

 9.11. Size:221K  inchange semiconductor
2sb507.pdf

2SB502A 2SB502A

isc Silicon PNP Power Transistor 2SB507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD313Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W to 25W AF poweramplif

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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