2SB508 Datasheet and Replacement

   Type Designator: 2SB508
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220

2SB508 Substitution

- BJT ⓘ Cross-Reference Search

2SB508 Datasheet (PDF)

..1. Size:42K sanyo
2sb508.pdf pdf_icon

..2. Size:193K inchange semiconductor
2sb508.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB508DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD314Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W

9.1. Size:56K toshiba
2sb502a 2sb503a.pdf pdf_icon

9.2. Size:112K mospec
2sb507.pdf pdf_icon

AAA

9.3. Size:25K no
2sb509.pdf pdf_icon

9.4. Size:161K jmnic
2sb509.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE

9.5. Size:158K jmnic
2sb507.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

9.6. Size:236K lge
2sb507.pdf pdf_icon

2SB507(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base V

9.7. Size:215K inchange semiconductor
2sb503.pdf pdf_icon

isc Silicon PNP Power Transistors 2SB503DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

9.8. Size:215K inchange semiconductor
2sb502.pdf pdf_icon

isc Silicon PNP Power Transistors 2SB502DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

9.9. Size:129K inchange semiconductor
2sb509.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

9.10. Size:179K inchange semiconductor
2sb506.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB506DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifi

9.11. Size:221K inchange semiconductor
2sb507.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD313Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W to 25W AF poweramplif

Datasheet: 2SB505 , 2SB506 , 2SB506A , 2SB507 , 2SB507C , 2SB507D , 2SB507E , 2SB507F , 2SD1047 , 2SB508C , 2SB508D , 2SB508E , 2SB508F , 2SB509 , 2SB51 , 2SB510 , 2SB510-5 .