All Transistors. 2SB511D Datasheet

 

2SB511D Datasheet and Replacement


   Type Designator: 2SB511D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220
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2SB511D Datasheet (PDF)

 8.1. Size:48K  no
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2SB511D

 8.2. Size:155K  jmnic
 2sb511.pdf pdf_icon

2SB511D

JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

 8.3. Size:218K  inchange semiconductor
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2SB511D

isc Silicon PNP Power Transistor 2SB511DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max) @I = -1.5ACE(sat) CComplement to Type 2SD325Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 5W AF power amplifier output applications.ABSOLUTE MA

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: ZTX755 | MJ1800 | KST20 | BFY73 | SGSD93E | SK3138 | D29F6

Keywords - 2SB511D transistor datasheet

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