2SB511D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB511D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SB511D Transistor Equivalent Substitute - Cross-Reference Search
2SB511D Datasheet (PDF)
2sb511.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
2sb511.pdf
isc Silicon PNP Power Transistor 2SB511DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max) @I = -1.5ACE(sat) CComplement to Type 2SD325Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 5W AF power amplifier output applications.ABSOLUTE MA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
