2SB511F Specs and Replacement

Type Designator: 2SB511F

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO220

 2SB511F Substitution

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2SB511F datasheet

 8.1. Size:48K  no

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2SB511F

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 8.2. Size:155K  jmnic

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2SB511F

JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base... See More ⇒

 8.3. Size:218K  inchange semiconductor

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2SB511F

isc Silicon PNP Power Transistor 2SB511 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max) @I = -1.5A CE(sat) C Complement to Type 2SD325 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 5W AF power amplifier output applications. ABSOLUTE MA... See More ⇒

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Detailed specifications: 2SB509, 2SB51, 2SB510, 2SB510-5, 2SB511, 2SB511C, 2SB511D, 2SB511E, A940, 2SB512, 2SB512A, 2SB513, 2SB513A, 2SB514, 2SB514C, 2SB514D, 2SB514E

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