2SB513 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB513
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
2SB513 Transistor Equivalent Substitute - Cross-Reference Search
2SB513 Datasheet (PDF)
2sb513.pdf
isc Silicon PNP Power Transistor 2SB513DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type 2SD366Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sb514.pdf
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2sb514.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbso
2sb512.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB512 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PA
2sb511.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
2sb518.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB518DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -90V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching an
2sb515.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB515DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -2ACE(sat) CComplement to Type 2SD331Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier
2sb514.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sym
2sb512.pdf
isc Silicon PNP Power Transistor 2SB512DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD365Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
2sb511.pdf
isc Silicon PNP Power Transistor 2SB511DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max) @I = -1.5ACE(sat) CComplement to Type 2SD325Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 5W AF power amplifier output applications.ABSOLUTE MA
2sb519.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB519DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
