2SB522-2 Specs and Replacement

Type Designator: 2SB522-2

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 43 W

Maximum Collector-Base Voltage |Vcb|: 85 V

Maximum Collector-Emitter Voltage |Vce|: 85 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO220

 2SB522-2 Substitution

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2SB522-2 datasheet

 8.1. Size:167K  inchange semiconductor

 2sb522.pdf pdf_icon

2SB522-2

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB522 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

 9.1. Size:183K  inchange semiconductor

 2sb521.pdf pdf_icon

2SB522-2

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB521 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

 9.2. Size:217K  inchange semiconductor

 2sb526.pdf pdf_icon

2SB522-2

isc Silicon PNP Power Transistor 2SB526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

 9.3. Size:178K  inchange semiconductor

 2sb520.pdf pdf_icon

2SB522-2

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB520 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -7A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a... See More ⇒

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Detailed specifications: 2SB520, 2SB520-1, 2SB520-2, 2SB521, 2SB521-1, 2SB521-2, 2SB522, 2SB522-1, 2SD669A, 2SB523, 2SB524, 2SB525, 2SB526, 2SB527, 2SB528, 2SB529, 2SB53

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