All Transistors. 2SB527 Datasheet

 

2SB527 Datasheet and Replacement


   Type Designator: 2SB527
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 130 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO126
 

 2SB527 Substitution

   - BJT ⓘ Cross-Reference Search

   

2SB527 Datasheet (PDF)

 9.1. Size:183K  inchange semiconductor
 2sb521.pdf pdf_icon

2SB527

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB521DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

 9.2. Size:167K  inchange semiconductor
 2sb522.pdf pdf_icon

2SB527

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB522DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

 9.3. Size:217K  inchange semiconductor
 2sb526.pdf pdf_icon

2SB527

isc Silicon PNP Power Transistor 2SB526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 9.4. Size:178K  inchange semiconductor
 2sb520.pdf pdf_icon

2SB527

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB520DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -7ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

SHOW MORE

Datasheet: 2SB521-2 , 2SB522 , 2SB522-1 , 2SB522-2 , 2SB523 , 2SB524 , 2SB525 , 2SB526 , BC639 , 2SB528 , 2SB529 , 2SB53 , 2SB530 , 2SB531 , 2SB532 , 2SB533 , 2SB534 .

History: 2SB333H | GC505 | BU603 | BCP51-10 | 2SC2174 | TMPA812M3 | BRT60

Keywords - 2SB527 transistor datasheet

 2SB527 cross reference
 2SB527 equivalent finder
 2SB527 lookup
 2SB527 substitution
 2SB527 replacement

 

 
Back to Top

 


 
.