All Transistors. 2SB534 Datasheet

 

2SB534 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB534

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

2SB534 Transistor Equivalent Substitute - Cross-Reference Search

 

2SB534 Datasheet (PDF)

5.1. 2sb531.pdf Size:36K _no

2SB534

5.2. 2sb536.pdf Size:158K _jmnic

2SB534
2SB534

JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abso

 5.3. 2sb531.pdf Size:206K _inchange_semiconductor

2SB534
2SB534

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB531 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 50W(Max)@TC=25? ·Complement to Type 2SD371 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas

5.4. 2sb536.pdf Size:125K _inchange_semiconductor

2SB534
2SB534

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sym

 5.5. 2sb532.pdf Size:197K _inchange_semiconductor

2SB534
2SB534

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB532 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25? APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collecto

5.6. 2sb539.pdf Size:204K _inchange_semiconductor

2SB534
2SB534

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB539 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25? ·Complement to Type 2SD287 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Recommended for 70~80W high-fidelity audio frequency amplifi

Datasheet: 2SB527 , 2SB528 , 2SB529 , 2SB53 , 2SB530 , 2SB531 , 2SB532 , 2SB533 , 2SC2078 , 2SB535 , 2SB536 , 2SB537 , 2SB538 , 2SB539 , 2SB539A , 2SB539B , 2SB539C .

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