2SB541 PDF and Equivalents Search

 ..1. Size:213K  inchange semiconductor

 2sb541.pdf

isc Silicon PNP Power Transistors 2SB541 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Suitable for output sta... See More ⇒

 9.1. Size:445K  sanyo

 2sb544.pdf

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 9.2. Size:134K  nec

 2sb548 2sb549 2sd414 2sd415.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiators ABSOLUTE MAXIMUM RATINGS (Ta = 25 ... See More ⇒

 9.3. Size:567K  nec

 2sb546a 2sb547a 2sd401a 2sd402a 2sd401a 2sd402a 2sb546a 2sb547a.pdf

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 9.4. Size:108K  mospec

 2sb546 2sb546a.pdf

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 9.5. Size:159K  jmnic

 2sb548.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE... See More ⇒

 9.6. Size:251K  jmnic

 2sb546a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simpli... See More ⇒

 9.7. Size:199K  jmnic

 2sb546.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplifi... See More ⇒

 9.8. Size:181K  inchange semiconductor

 2sb548.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB548 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-126 package Complement to Type 2SD414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 9.9. Size:220K  inchange semiconductor

 2sb546a.pdf

isc Silicon PNP Power Transistor 2SB546A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complement... See More ⇒

 9.10. Size:185K  inchange semiconductor

 2sb547.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB547 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD402 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical def... See More ⇒

 9.11. Size:185K  inchange semiconductor

 2sb549.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO With TO-126 package Complement to Type 2SD415 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 9.12. Size:215K  inchange semiconductor

 2sb546.pdf

isc Silicon PNP Power Transistor 2SB546 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complementar... See More ⇒