2SB544E Datasheet and Replacement

   Type Designator: 2SB544E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

2SB544E Substitution

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2SB544E Datasheet (PDF)

8.1. Size:445K sanyo
2sb544.pdf pdf_icon

9.1. Size:134K nec
2sb548 2sb549 2sd414 2sd415.pdf pdf_icon

DATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiatorsABSOLUTE MAXIMUM RATINGS (Ta = 25

9.2. Size:567K nec
2sb546a 2sb547a 2sd401a 2sd402a 2sd401a 2sd402a 2sb546a 2sb547a.pdf pdf_icon

9.3. Size:108K mospec
2sb546 2sb546a.pdf pdf_icon

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9.4. Size:159K jmnic
2sb548.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

9.5. Size:251K jmnic
2sb546a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simpli

9.6. Size:199K jmnic
2sb546.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplifi

9.7. Size:181K inchange semiconductor
2sb548.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB548DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-126 packageComplement to Type 2SD414Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

9.8. Size:220K inchange semiconductor
2sb546a.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB546ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD401AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical deflectionof complement

9.9. Size:185K inchange semiconductor
2sb547.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB547DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD402Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical def

9.10. Size:213K inchange semiconductor
2sb541.pdf pdf_icon

isc Silicon PNP Power Transistors 2SB541DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for output sta

9.11. Size:185K inchange semiconductor
2sb549.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB549DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOWith TO-126 packageComplement to Type 2SD415Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

9.12. Size:215K inchange semiconductor
2sb546.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB546DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD401Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical deflectionof complementar

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .