2SB57 Datasheet and Replacement

   Type Designator: 2SB57
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: R55
     - BJT ⓘ Cross-Reference Search