2SB595Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB595Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 270 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
2SB595Y Transistor Equivalent Substitute - Cross-Reference Search
2SB595Y Datasheet (PDF)
2sb595.pdf
2SB595 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD525ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 40 W Ju
2sb595.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB595 DESCRIPTION With TO-220C package Complement to type 2SD525 High breakdown voltage :VCEO=-100V Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emi
2sb595.pdf
isc Silicon PNP Power Transistor 2SB595DESCRIPTIONLow Collector Saturation Voltage:V = -2.0(V)(Max)@I = -4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOComplement to Type 2SD525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 30W high-fidelity aud
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
