All Transistors. 2SB61 Datasheet

 

2SB61 Datasheet and Replacement


   Type Designator: 2SB61
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO1
 

 2SB61 Substitution

   - BJT ⓘ Cross-Reference Search

   

2SB61 Datasheet (PDF)

 0.1. Size:178K  inchange semiconductor
 2sb611.pdf pdf_icon

2SB61

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB611DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

 0.2. Size:207K  inchange semiconductor
 2sb613.pdf pdf_icon

2SB61

isc Silicon PNP Power Transistors 2SB613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD583Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicatio

 0.3. Size:189K  inchange semiconductor
 2sb616.pdf pdf_icon

2SB61

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB616DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -100V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWith TO-3PN packageComplement to Type 2SD586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

 0.4. Size:211K  inchange semiconductor
 2sb612.pdf pdf_icon

2SB61

isc Silicon PNP Power Transistors 2SB612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD582Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommended for 80~100W audio amplifier output stage.ABSOLUTE MAXIMUM RATINGS(T =25

SHOW MORE

Datasheet: 2SB605 , 2SB606 , 2SB607 , 2SB608 , 2SB608A , 2SB609 , 2SB609A , 2SB60A , 2N3055 , 2SB611 , 2SB611A , 2SB612 , 2SB612A , 2SB613 , 2SB615 , 2SB616 , 2SB616A .

History: RN2912FS | 2N5816 | 3DD4242D-N | MMBT489 | CSC1213 | 2SD627 | NR421HF

Keywords - 2SB61 transistor datasheet

 2SB61 cross reference
 2SB61 equivalent finder
 2SB61 lookup
 2SB61 substitution
 2SB61 replacement

 

 
Back to Top

 


 
.