All Transistors. 2SB61 Datasheet

 

2SB61 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB61
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO1

 2SB61 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB61 Datasheet (PDF)

 0.1. Size:178K  inchange semiconductor
2sb611.pdf

2SB61
2SB61

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB611DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

 0.2. Size:207K  inchange semiconductor
2sb613.pdf

2SB61
2SB61

isc Silicon PNP Power Transistors 2SB613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD583Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicatio

 0.3. Size:189K  inchange semiconductor
2sb616.pdf

2SB61
2SB61

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB616DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -100V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWith TO-3PN packageComplement to Type 2SD586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

 0.4. Size:211K  inchange semiconductor
2sb612.pdf

2SB61
2SB61

isc Silicon PNP Power Transistors 2SB612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD582Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommended for 80~100W audio amplifier output stage.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DMA20601 | 2SB624BV5 | 2SB611

 

 
Back to Top