All Transistors. 2SB617 Datasheet

 

2SB617 Datasheet and Replacement


   Type Designator: 2SB617
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: MT-200
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2SB617 Datasheet (PDF)

 9.1. Size:178K  inchange semiconductor
 2sb611.pdf pdf_icon

2SB617

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB611DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

 9.2. Size:207K  inchange semiconductor
 2sb613.pdf pdf_icon

2SB617

isc Silicon PNP Power Transistors 2SB613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD583Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicatio

 9.3. Size:189K  inchange semiconductor
 2sb616.pdf pdf_icon

2SB617

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB616DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -100V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWith TO-3PN packageComplement to Type 2SD586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

 9.4. Size:211K  inchange semiconductor
 2sb612.pdf pdf_icon

2SB617

isc Silicon PNP Power Transistors 2SB612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD582Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommended for 80~100W audio amplifier output stage.ABSOLUTE MAXIMUM RATINGS(T =25

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History: FMMT723 | 2N3322 | 2SC3447M | BC222 | 2SA9012 | 2SC2287M | 2N1587

Keywords - 2SB617 transistor datasheet

 2SB617 cross reference
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