2SB618 Specs and Replacement

Type Designator: 2SB618

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: MT-200

 2SB618 Substitution

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2SB618 datasheet

 9.1. Size:178K  inchange semiconductor

 2sb611.pdf pdf_icon

2SB618

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB611 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -110V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a... See More ⇒

 9.2. Size:207K  inchange semiconductor

 2sb613.pdf pdf_icon

2SB618

isc Silicon PNP Power Transistors 2SB613 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -250V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C High Current Capability Complement to Type 2SD583 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applicatio... See More ⇒

 9.3. Size:189K  inchange semiconductor

 2sb616.pdf pdf_icon

2SB618

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB616 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -100V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C With TO-3PN package Complement to Type 2SD586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amp... See More ⇒

 9.4. Size:211K  inchange semiconductor

 2sb612.pdf pdf_icon

2SB618

isc Silicon PNP Power Transistors 2SB612 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD582 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommended for 80 100W audio amplifier output stage. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

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Detailed specifications: 2SB612, 2SB612A, 2SB613, 2SB615, 2SB616, 2SB616A, 2SB617, 2SB617A, S8050, 2SB618A, 2SB619, 2SB62, 2SB620, 2SB621, 2SB621A, 2SB622, 2SB624

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