2SB632D Specs and Replacement
Type Designator: 2SB632D
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126
2SB632D Substitution
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2SB632D datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 B... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB632 DESCRIPTION High Collector Current-I =-2.0A C High Collector-Emitter Breakdown Voltage- V =-25V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifier applications ABSOLUTE... See More ⇒
Detailed specifications: 2SB631D, 2SB631E, 2SB631F, 2SB631K, 2SB631KD, 2SB631KE, 2SB631KF, 2SB632, TIP35C, 2SB632E, 2SB632F, 2SB632K, 2SB632KD, 2SB632KE, 2SB632KF, 2SB633, 2SB633C
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