2SB632K Specs and Replacement
Type Designator: 2SB632K
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
2SB632K datasheet
..1. Size:211K jmnic
2sb632 2sb632k.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max... See More ⇒
8.1. Size:171K inchange semiconductor
2sb632-k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 B... See More ⇒
8.2. Size:188K inchange semiconductor
2sb632.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB632 DESCRIPTION High Collector Current-I =-2.0A C High Collector-Emitter Breakdown Voltage- V =-25V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifier applications ABSOLUTE... See More ⇒
9.1. Size:27K sanyo
2sb633p 2sd613p.pdf
Ordering number ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter Spec... See More ⇒
9.3. Size:220K jmnic
2sb631 2sb631k.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to ... See More ⇒
9.4. Size:199K jmnic
2sb633.pdf
JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage VCEO=-85V High current IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=2... See More ⇒
9.5. Size:358K lzg
2sb631k 3ca631k.pdf
2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier,medium speed switching applications . , 2SD600K(3DA600K) Features High V ,high current,low saturation voltage and good linearity of h compleme... See More ⇒
9.6. Size:200K inchange semiconductor
2sb631.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-100V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applicati... See More ⇒
9.7. Size:178K inchange semiconductor
2sb631 2sb631k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto... See More ⇒
9.8. Size:178K inchange semiconductor
2sb631-k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto... See More ⇒
9.9. Size:213K inchange semiconductor
2sb631k.pdf
isc Silicon PNP Power Transistor 2SB631K DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM ... See More ⇒
9.10. Size:219K inchange semiconductor
2sb630.pdf
isc Silicon PNP Power Transistor 2SB630 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Complement to Type 2SD610 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications. Suitable for driver of 200 300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
9.11. Size:212K inchange semiconductor
2sb634.pdf
isc Silicon PNP Power Transistor 2SB634 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒
9.12. Size:218K inchange semiconductor
2sb633.pdf
isc Silicon PNP Power Transistor 2SB633 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -85V(Min) (BR)CEO Complement to Type 2SD613 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency 25 35 watts output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -1... See More ⇒
9.13. Size:184K inchange semiconductor
2sb638.pdf
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB638 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h =1000 (Min) @ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier a... See More ⇒
Detailed specifications: 2SB631K, 2SB631KD, 2SB631KE, 2SB631KF, 2SB632, 2SB632D, 2SB632E, 2SB632F, BC558, 2SB632KD, 2SB632KE, 2SB632KF, 2SB633, 2SB633C, 2SB633D, 2SB633E, 2SB633F
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