2SB633D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB633D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SB633D Transistor Equivalent Substitute - Cross-Reference Search
2SB633D Datasheet (PDF)
2sb633p 2sd613p.pdf
Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec
2sb633.pdf
JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage :VCEO=-85V High current :IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=2
2sb633.pdf
isc Silicon PNP Power Transistor 2SB633DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -85V(Min)(BR)CEOComplement to Type 2SD613Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1
Datasheet: 2SB632E , 2SB632F , 2SB632K , 2SB632KD , 2SB632KE , 2SB632KF , 2SB633 , 2SB633C , BC558 , 2SB633E , 2SB633F , 2SB633P , 2SB634 , 2SB635 , 2SB636 , 2SB637 , 2SB637K .
