2SB636 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB636
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO92
2SB636 Transistor Equivalent Substitute - Cross-Reference Search
2SB636 Datasheet (PDF)
2sb633p 2sd613p.pdf
Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec
2sb631 2sb631k.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
2sb632 2sb632k.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max
2sb633.pdf
JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage :VCEO=-85V High current :IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=2
2sb631k 3ca631k.pdf
2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR : Purpose:Low frequency power amplifier,medium speed switching applications . :, 2SD600K(3DA600K) Features:High V ,high current,low saturation voltage and good linearity of h compleme
2sb631.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB631DESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicati
2sb631 2sb631k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto
2sb631-k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto
2sb631k.pdf
isc Silicon PNP Power Transistor 2SB631KDESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM
2sb630.pdf
isc Silicon PNP Power Transistor 2SB630DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOComplement to Type 2SD610Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.Suitable for driver of 200~300 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aS
2sb634.pdf
isc Silicon PNP Power Transistor 2SB634DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sb632-k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 B
2sb633.pdf
isc Silicon PNP Power Transistor 2SB633DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -85V(Min)(BR)CEOComplement to Type 2SD613Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1
2sb632.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB632DESCRIPTIONHigh Collector Current-I =-2.0ACHigh Collector-Emitter Breakdown Voltage-: V =-25V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD612Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency power amplifier applicationsABSOLUTE
2sb638.pdf
INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB638DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h =1000 (Min) @ I = -5AFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
