2SB64 Datasheet and Replacement
Type Designator: 2SB64
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Emitter-Base Voltage |Veb|: 1
V
Maximum Collector Current |Ic max|: 6
A
Max. Operating Junction Temperature (Tj): 75
°C
Transition Frequency (ft): 0.5
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO3
-
BJT ⓘ Cross-Reference Search
2SB64 Datasheet (PDF)
0.1. Size:430K 1
2sb641 2sb642.pdf 
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
0.2. Size:284K mcc
2sb647l-c.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian
0.3. Size:719K mcc
2sb647-b.pdf
2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A
0.4. Size:284K mcc
2sb647l-b.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian
0.5. Size:719K mcc
2sb647-d.pdf
2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A
0.6. Size:284K mcc
2sb647l-d.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian
0.7. Size:719K mcc
2sb647-c.pdf
2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A
0.8. Size:39K panasonic
2sb643 2sb644.pdf
Transistor2SB643, 2SB644Silicon PNP epitaxial planer typeFor low-power general amplificationUnit: mmComplementary to 2SD638 and 2SD6396.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.Absolute Maximum Ratings (Ta=25C)0.85Parameter Symbol Ratings Unit
0.9. Size:54K panasonic
2sb642 e.pdf
Transistor2SB642Silicon PNP epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)0.55 0.1 0.45 0.05Parameter
0.10. Size:50K panasonic
2sb642.pdf
Transistor2SB642Silicon PNP epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)0.55 0.1 0.45 0.05Parameter
0.11. Size:44K panasonic
2sb643 e.pdf
Transistor2SB643, 2SB644Silicon PNP epitaxial planer typeFor low-power general amplificationUnit: mmComplementary to 2SD638 and 2SD6396.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.Absolute Maximum Ratings (Ta=25C)0.85Parameter Symbol Ratings Unit
0.12. Size:167K utc
2sb647.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB647L-x-T9N-B 2SB647G-x-T9N-B TO-92NL E C B Tape Box 2SB647L-x-T9N-K 2SB647G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4
0.13. Size:293K utc
2sb649 2sb649a.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 11SOT-223 SOT-89 APPLICATIONS 1* Low frequency power amplifier complementary pair with UTC 12SD669/A TO-252 TO-9211TO-126TO-92NL11TO-126STO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
0.15. Size:35K hitachi
2sb649a.pdf
2SB649, 2SB649ASilicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SD669/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SB649, 2SB649AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB649 2SB649A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base v
0.16. Size:33K hitachi
2sb647.pdf
2SB647, 2SB647ASilicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD667/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SB647, 2SB647AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SB647 2SB647A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base volt
0.17. Size:253K secos
2sb649-649a.pdf
2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126C3.20.28.00.2FEATURES 2.00.24.140.1O2.80.1 O3.20.1 Power smplifier applications11.00.21.40.11 2 3 Power dissipation PCM : 1 W Tamb=25 1.270.1 Collector current 15.3
0.18. Size:495K jiangsu
2sb647.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO 92L 2SB647 TRANSISTOR (PNP)1. EMITTER2. COLLECTORFEATURES Low Frequency Power Amplifier3. BASE Complementary Pair with 2SD667 Equivalent Circuit B647=Device code B647Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING
0.19. Size:280K jiangsu
2sb649 2sb649a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit
0.20. Size:5305K jiangsu
2sb647 2sb647a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va
0.21. Size:199K jmnic
2sb649 2sb649a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO:-120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected t
0.22. Size:153K jmnic
2sb645.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB645 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV
0.23. Size:201K lge
2sb649a-2sb649.pdf
2SB649/2SB649A(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.5007.4002.9001.100Symbol Parameter Value Units7.8001.500VCBO Collector-Base Voltage -180 V 3.9003.0004.100VCEO Collector-Emitter Voltage 3
0.24. Size:194K lge
2sb649-2sb649a to-126c.pdf
2SB649/2SB649A TO-126C Transistor (PNP)TO-126C1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -180 V 3.0007.8003.4008.200 1.800VCEO Collector-Emitter Voltage 2.2004.0402SB649 -120 V
0.25. Size:186K wietron
2sb647 a.pdf
2SB647 / 2SB647APNP General Purpose Transistors2P b Lead(Pb)-Free13231.EMITTER3.BASE2.COLLECTOR1TO-92MODMAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage80VCEOVVCBOCollector-Base Voltage 120 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 1000 mATotal Device DissipationPD900 mWTA=25CTj CJunc
0.26. Size:273K wietron
2sb649.pdf
2SB649/2SB649APNP Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126CABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol 2SB649 2SB649A UnitVCBO-180 VCollector-Emitter VoltageVCEO-120 -160 VCollector-Base VoltageVEBOEmitter-Base Voltage 6.0 VCollector Current IC-1.5 APD1.0 WPower DisspationTj+150 CJunction Temp
0.27. Size:873K blue-rocket-elect
2sb649ta.pdf
2SB649TA(BR3CA649TA) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SD669TA(BR3DA669TA)Complementary pair with 2SD669TA(BR3DA669TA). / Applications Low frequency power amplifier. / Equivalen
0.28. Size:900K blue-rocket-elect
2sb649ad.pdf
2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni
0.29. Size:1004K blue-rocket-elect
2sb649 2sb649a.pdf
2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A)Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin
0.30. Size:897K blue-rocket-elect
2sb647 2sb647a.pdf
2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A)Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
0.31. Size:162K nell
2sb649am.pdf
RoHS RoHS 2SB649AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose PNP Power Transistor-1.5A / -120V, -160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SD669AM/2SD669AM-APNPEAll dimensions in millimeter
0.32. Size:162K nell
2sb649am-a.pdf
RoHS RoHS 2SB649AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose PNP Power Transistor-1.5A / -120V, -160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SD669AM/2SD669AM-APNPEAll dimensions in millimeter
0.33. Size:244K lzg
2sb647a-b.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80
0.34. Size:244K lzg
2sb647a-c.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80
0.35. Size:380K lzg
2sb649-a 3ca649-a.pdf
2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier. : 2SD669(3DA669)/2SD669A(3DA669A) Features: Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -180 V CBO
0.36. Size:152K haolin elec
2sb647.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDSOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation 1. BASE PCM: 0.9 W (Tamb=25) 2. COLLECTOR 1 Collector current 2 ICM: -1 A 3. EMITTER 3 Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELE
0.37. Size:81K inchange semiconductor
2sb649a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
0.38. Size:212K inchange semiconductor
2sb645.pdf
isc Silicon PNP Power Transistors 2SB645DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CComplement to Type 2SD665Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 200W high-fidelity audi
0.39. Size:212K inchange semiconductor
2sb649.pdf
isc Silicon PNP Power Transistor 2SB649DESCRIPTIONHigh Collector Current-I =-1.5ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RA
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, 8050
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
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