2SB649AB PDF and Equivalents Search

 

2SB649AB Specs and Replacement

Type Designator: 2SB649AB

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

 2SB649AB Substitution

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2SB649AB datasheet

 7.1. Size:293K  utc

2sb649 2sb649a.pdf pdf_icon

2SB649AB

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3... See More ⇒

 7.2. Size:35K  hitachi

2sb649a.pdf pdf_icon

2SB649AB

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB649 2SB649A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base v... See More ⇒

 7.3. Size:280K  jiangsu

2sb649 2sb649a.pdf pdf_icon

2SB649AB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit... See More ⇒

 7.4. Size:199K  jmnic

2sb649 2sb649a.pdf pdf_icon

2SB649AB

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t... See More ⇒

Detailed specifications: 2SB648A, 2SB648AB, 2SB648AC, 2SB648B, 2SB648C, 2SB648D, 2SB649, 2SB649A, S9018, 2SB649AC, 2SB649B, 2SB649C, 2SB649D, 2SB65, 2SB650, 2SB650H, 2SB653

Keywords - 2SB649AB pdf specs

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