2SB688 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB688
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 280 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO218
2SB688 Transistor Equivalent Substitute - Cross-Reference Search
2SB688 Datasheet (PDF)
2sb688.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO -120 VCollector-Emi
2sb688.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SB688 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SD716ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collect
2sb688.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbs
2sb688 to3p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SEMICONDUCTOR2SB688TECHNICAL DATAPNP EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATION FEATURES* Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS(Ta=25)PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V
2sb688 3ca688.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SB688(3CA688) PNP /SILICON PNP TRANSISTOR : Purpose: Designed for use in general-purpose amplifier and switching application. 45-50W 2SD718(3DA718) Features: Recommend for 45-50W audio frequency amplifier output stage, Complementary to 2SD718(3DA718). /Absolut
2sb688.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicat
2sb688r 2sb688o.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sb686.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JMnic Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION With TO-3P(I) package Complement to type 2SD716 APPLICATIONS Power amplifier applications Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sb681.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2SB681DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier use.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sb680.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB680 DESCRIPTION High Power Dissipation- : PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) Complement to Type 2SC1080 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC
2sb689.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2SB689DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and TV verticaldeflection output applications.ABSOLUTE MAXIMUM RATING
2sb686.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2SB686DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD716Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 30~35W high-fidelity audio frequencyamplifier output stage.ABSOLUTE
2sb683.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2SB683DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sb682.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2SB682DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
![2SB688](https://alltransistors.com/images/us.png)
![2SB688](https://alltransistors.com/images/es.png)
![2SB688](https://alltransistors.com/images/ru.png)
LIST
Last Update
BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ