All Transistors. 2SB688 Datasheet

 

2SB688 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB688
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 280 pF
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO218

 2SB688 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB688 Datasheet (PDF)

 ..1. Size:77K  utc
2sb688.pdf

2SB688 2SB688

UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO -120 VCollector-Emi

 ..2. Size:114K  mospec
2sb688.pdf

2SB688 2SB688

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 ..3. Size:29K  wingshing
2sb688.pdf

2SB688

2SB688 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SD716ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collect

 ..4. Size:207K  jmnic
2sb688.pdf

2SB688 2SB688

JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbs

 ..5. Size:231K  first silicon
2sb688 to3p.pdf

2SB688 2SB688

SEMICONDUCTOR2SB688TECHNICAL DATAPNP EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATION FEATURES* Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS(Ta=25)PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V

 ..6. Size:289K  lzg
2sb688 3ca688.pdf

2SB688 2SB688

2SB688(3CA688) PNP /SILICON PNP TRANSISTOR : Purpose: Designed for use in general-purpose amplifier and switching application. 45-50W 2SD718(3DA718) Features: Recommend for 45-50W audio frequency amplifier output stage, Complementary to 2SD718(3DA718). /Absolut

 ..7. Size:223K  inchange semiconductor
2sb688.pdf

2SB688 2SB688

isc Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicat

 0.1. Size:196K  cn sptech
2sb688r 2sb688o.pdf

2SB688 2SB688

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 9.1. Size:34K  no
2sb689.pdf

2SB688

 9.2. Size:39K  no
2sb682.pdf

2SB688

 9.3. Size:200K  jmnic
2sb686.pdf

2SB688 2SB688

JMnic Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION With TO-3P(I) package Complement to type 2SD716 APPLICATIONS Power amplifier applications Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 9.4. Size:208K  inchange semiconductor
2sb681.pdf

2SB688 2SB688

isc Silicon PNP Power Transistor 2SB681DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier use.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.5. Size:76K  inchange semiconductor
2sb680.pdf

2SB688 2SB688

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB680 DESCRIPTION High Power Dissipation- : PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) Complement to Type 2SC1080 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC

 9.6. Size:213K  inchange semiconductor
2sb689.pdf

2SB688 2SB688

isc Silicon PNP Power Transistor 2SB689DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and TV verticaldeflection output applications.ABSOLUTE MAXIMUM RATING

 9.7. Size:219K  inchange semiconductor
2sb686.pdf

2SB688 2SB688

isc Silicon PNP Power Transistor 2SB686DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD716Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 30~35W high-fidelity audio frequencyamplifier output stage.ABSOLUTE

 9.8. Size:218K  inchange semiconductor
2sb683.pdf

2SB688 2SB688

isc Silicon PNP Power Transistor 2SB683DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 9.9. Size:218K  inchange semiconductor
2sb682.pdf

2SB688 2SB688

isc Silicon PNP Power Transistor 2SB682DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Datasheet: 2SB68 , 2SB681 , 2SB682 , 2SB683 , 2SB685 , 2SB686 , 2SB686O , 2SB686R , 2SD2499 , 2SB688O , 2SB688R , 2SB689 , 2SB69 , 2SB690 , 2SB691 , 2SB692 , 2SB693 .

 

 
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