2N160 Datasheet and Replacement

   Type Designator: 2N160
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO22
      - BJT Cross-Reference Search