2SB737 Datasheet and Replacement

   Type Designator: 2SB737
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

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2SB737 Datasheet (PDF)

..1. Size:1246K rohm
2sb737 2sb821.pdf pdf_icon

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2sb734.pdf pdf_icon

9.2. Size:183K nec
2sb736 2sb736 2sb736a.pdf pdf_icon

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2sb733.pdf pdf_icon

9.4. Size:31K hitachi
2sb738 2sb739.pdf pdf_icon

2SB738, 2SB739Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD787 and 2SD788OutlineTO-92MOD1. Emitter2. Collector3. Base3212SB738, 2SB739Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SB738 2SB739 UnitCollector to base voltage VCBO 20 20 VCollector to emitter voltage VCEO 16 20 VEmitter to base v

9.5. Size:39K no
2sb731.pdf pdf_icon

9.6. Size:1155K kexin
2sb736a.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB736ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter

9.7. Size:1127K kexin
2sb736.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB736SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter V

9.8. Size:187K inchange semiconductor
2sb731.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB731DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -50V(Min)CEO(SUS)Low Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -1ACE(sat) CDC Current Gain-: h = 135-600@I = -0.1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .