2SB754O Datasheet. Specs and Replacement
Type Designator: 2SB754O 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO218
2SB754O Substitution
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2SB754O datasheet
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current I =-7A C Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected ... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO High Collector Current I = -7A C Low Collector Saturation Voltage- V = -0.4V(Max) @I = -4A CE(sat) C Complement to Type 2SD844 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High cur... See More ⇒
Detailed specifications: 2SB750B, 2SB751, 2SB751A, 2SB751B, 2SB753, 2SB753O, 2SB753Y, 2SB754, 2SC1815, 2SB754Y, 2SB755, 2SB756, 2SB757, 2SB758, 2SB758A, 2SB759, 2SB759A
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