2SB760 Datasheet and Replacement

isc Silicon PNP Power Transistor 2SB760DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Transistor2SB767Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD8751.5 0.14.5 0.1Features1.6 0.2Large collector power dissipation PC.High collector to emitter voltage VCEO.Mini type package, allowing downsizing of the equipment and45automatic insertion through the tape packing and the magazinepacking.0.4

Transistor2SB766, 2SB766ASilicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD874 and 2SD874AFeatures Large collector power dissipation PC. 1.5 0.14.5 0.11.6 0.2 Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.45Absolute Maximu

Transistor2SB766, 2SB766ASilicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD874 and 2SD874AFeatures Large collector power dissipation PC. 1.5 0.14.5 0.11.6 0.2 Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.45Absolute Maximu

Transistor2SB767Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD8751.5 0.14.5 0.1Features1.6 0.2Large collector power dissipation PC.High collector to emitter voltage VCEO.Mini type package, allowing downsizing of the equipment and45automatic insertion through the tape packing and the magazinepacking.0.4

UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Haloge

2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89FEATURES Large collector power dissipation PC AC Complementary to 2SD874A DCollectorPACKAGE INFORMATION BaseWeight: 0.05 g (approximately) ILH GEmitterMillimeter Millimeter

2SB764L PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE Power dissipation PCM: 0.9 W (Tamb=25) Collector current ICM: -1 A TO-92L Collector-base voltage V(BR)CBO: -60 V G H1Emitter Operating and storage junction temperature range 2Collector3Base JTJ,

2SB766PNP Silicon Elektronische BauelementeMedium Power TransistorRoHS Compliant ProductDD1ASOT-89b1FEATURES b Power dissipation Ce e1 P : 500mW Tamb=25 CM1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min Max: -1 AICM3.EMITTERA 1.400 1.600 0.055 0.063 Collector-base voltage b 0.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO 92L 2SB764 TRANSISTOR (PNP)1. EMITTER2. COLLECTORFEATURES General Purpose Switching Application3. BASE Equivalent Circuit dot = Greenmolding compound device, if none, the normal device ORDERING INFORMATION Part N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB766A TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Large collector power dissipation PC 1 Complementary to 2SD874A 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 V VCEO Collec

JMnic Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION With TO-220C package Complement to type 2SD856/856A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL P

JMnic Product Specification Silicon PNP Power Transistors 2SB762 2SB762A DESCRIPTION With TO-220C package Complement to type 2SD857/857A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL P

2SB7 66A TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 2. COLLECTOR 1 Large collector power dissipation PC 2 Complementary to 2SD874A 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB7 66 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Large collector power dissipation PC 2. COLLECTOR 1 Complementary to 2SD874 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB766SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN Large collector power dissipation PC 0.530.400.480.442x)0.13 B Complementary to 2SD874 0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parame

2SB766A SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.63. EMITTER 1.81.41.43 2.64.252.43.75Features 0.8MINLarge collector power dissipation PC 0.530.400.480.442x)0.13 B0.35 Complementary to 2SD874A 0.371.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Par

2SB766APNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValueCollector-Base Voltage VCBO -60VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -1ACollector Power dissipation PC mW500Junction Tempera

FM120-M WILLASTHRU2SB766ASOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HTRANSISTOR(PNP) urface mounted application in order to

FM120-MWILLASTHRU2SB766 SOT-89 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProdPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTRANSI

SMD Type TransistorsPNP Transistors2SB766A Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874A.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current

SMD Type TransistorsPNP Transistors2SB767 Features 1.70 0.1 Large collector power dissipation PC High collector to emitter voltage VCEO. Complimentary to 2SD875 .0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitt

SMD Type TransistorsPNP Transistors2SB766 Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current -

SMD Type TransistorsPNP Transistors2SB768TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 High voltage:VCEO=-150V Complimentary to 2SD1033.0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base

isc Silicon PNP Power Transistor 2SB763DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEHigh Collector Power DissipationComplement to Type 2SD858Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SB761DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD856Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon PNP Darlington Power Transistor 2SB765DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1.5AFE CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -1.5ACE(sat) CComplement to Type 2SD864Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

isc Silicon PNP Power Transistor 2SB762DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB768DESCRIPTIONHigh voltage:V =-150VCEOPNP silicon triple diffused transistorComplementary NPN types:2SD1033100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB768 is designed for color TV vertical deflectionoutput especially in hybrid