2SB765 Datasheet. Specs and Replacement

Type Designator: 2SB765  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO220

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2SB765 datasheet

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2SB765

isc Silicon PNP Darlington Power Transistor 2SB765 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1.5A FE C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -1.5A CE(sat) C Complement to Type 2SD864 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... See More ⇒

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Detailed specifications: 2SB762B, 2SB763, 2SB763A, 2SB763B, 2SB764, 2SB764D, 2SB764E, 2SB764F, 2222A, 2SB765K, 2SB766, 2SB766A, 2SB767, 2SB768, 2SB77, 2SB772, 2SB773

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