2SB79 Datasheet and Replacement

Transistor2SB790Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD9696.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta

Transistor2SB792, 2SB792ASilicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD814+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin

Transistor2SB790Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD9696.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta

Transistor2SB792, 2SB792ASilicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD814+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin

UNISONIC TECHNOLOGIES CO., LTD 2SB798 P NP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)

2SB791(K)Silicon PNP EpitaxialApplicationMedium speed and power switching complementary pair with 2SD970(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 2 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage

JMnic Product Specification Silicon PNP Power Transistors 2SB794 2SB795 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage Complement to type 2SD985 2SD986 APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2

JMnic Product Specification Silicon PNP Power Transistors 2SB794 2SB795 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage Complement to type 2SD985 2SD986 APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2

SMD Type TransistorsPNP Transistors2SB7981.70 0.1 Features Low Collector Saturation Voltage: VCE(sat)

SMD Type TransistorsPNP Transistors2SB7991.70 0.1 Features Low Collector Saturation Voltage: VCE(sat)

SMD Type TransistorsPNP Transistors2SB792SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High collector to emitter voltage VCEO. Low noise voltage NV1 2 Complimentary to 2SD814.+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta

SMD Type TransistorsPNP Transistors2SB792ASOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features High collector to emitter voltage VCEO. Low noise voltage NV1 2 Complimentary to 2SD814A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volt

2SB799PNP-Silicon General use Transistors41W 1.5A25V ApplicationsCan be used for switching and amplifying in various 21 3electrical and electronic circuit. SOT-89 Maximum ratingsParameters Symbol Rating UnitMarking V VCEO 25Collector-emitter voltage (IB=0) 2SB799=HDVCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0

2SB798PNP-Silicon General use Transistors4 1W 1.0A25V 32 1 2 1 3SOT-89 ApplicationsCan be used for switching and amplifying in various 1 Base 2/4 Collector 3 Emitter electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-

isc Silicon PNP Darlington Power Transistor 2SB791DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = -4AFE CLow Saturation VoltageComplement to Type 2SD970Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed and power switchingappl

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB795DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1A)FE CE C Low Collector Saturation Voltage-: V = -1.5V(Max.) @I = -1ACE(sat) CBuilt-in a dumper diode at C-EComplement to Type 2SD986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB794DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1A)FE CE C Low Collector Saturation Voltage-: V = -1.5V(Max.) @I = -1ACE(sat) CBuilt-in a dumper diode at C-EComplement to Type 2SD985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB796DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -200V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a