All Transistors. 2N1611 Datasheet

 

2N1611 Datasheet and Replacement


   Type Designator: 2N1611
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 4.5 W
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO37
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2N1611 Datasheet (PDF)

 9.1. Size:665K  rca
 2n1613.pdf pdf_icon

2N1611

 9.2. Size:51K  philips
 2n1613.pdf pdf_icon

2N1611

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt

 9.3. Size:64K  central
 2n1613 2n1711 2n1893.pdf pdf_icon

2N1611

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.4. Size:22K  semelab
 2n1616.pdf pdf_icon

2N1611

2N1616MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO61 Hermetic Package High Current Switching LF Large Signal Amplification TO61 Metal Package.Pin 1 Emitter Pin 2 Base Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless

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Datasheet: 2N1605A , 2N1606 , 2N1607 , 2N1608 , 2N1609 , 2N160A , 2N161 , 2N1610 , 2SC1740 , 2N1612 , 2N1613 , 2N1613-46 , 2N1613A , 2N1613B , 2N1613L , 2N1613S , 2N1614 .

History: RN1909 | ZTX331M | P607 | ZTX237 | US5L10 | NTE2547 | BFR89TO5

Keywords - 2N1611 transistor datasheet

 2N1611 cross reference
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