All Transistors. 2SB798DK Datasheet

 

2SB798DK Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB798DK

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 160 °C

Transition Frequency (ft): 55 MHz

Collector Capacitance (Cc): 36 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SP0

2SB798DK Transistor Equivalent Substitute - Cross-Reference Search

 

2SB798DK Datasheet (PDF)

4.1. 2sb798.pdf Size:221K _nec

2SB798DK
2SB798DK

4.2. 2sb798.pdf Size:175K _utc

2SB798DK
2SB798DK

UNISONIC TECHNOLOGIES CO., LTD 2SB798 P NP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) SOT-89 * Excellent DC Current Gain Linearity : hFE = 100 Typ. (V

4.3. 2sb798.pdf Size:1353K _kexin

2SB798DK
2SB798DK

SMD Type Transistors PNP Transistors 2SB798 1.70 0.1 ■ Features ● Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) ● Excellent DC Current Gain Linearity : 0.42 0.1 0.46 0.1 hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO

Datasheet: 2SB791K , 2SB792 , 2SB793 , 2SB793A , 2SB794 , 2SB795 , 2SB796 , 2SB798 , BC108 , 2SB798DL , 2SB798DM , 2SB799 , 2SB799MK , 2SB799ML , 2SB799MM , 2SB80 , 2SB800 .

 


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