2SB798DL Specs and Replacement
Type Designator: 2SB798DL
SMD Transistor Code: DL
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 36 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: SOT89
2SB798DL Substitution
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2SB798DL datasheet
2SB798 PNP-Silicon General use Transistors 4 1W 1.0A 25V 3 2 1 2 1 3 SOT-89 Applications Can be used for switching and amplifying in various 1 Base 2/4 Collector 3 Emitter electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 30 V Collector-base voltage IE=0 VEBO 6 V Emitter-... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2SB798 P NP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage VCE(sat)... See More ⇒
SMD Type Transistors PNP Transistors 2SB798 1.70 0.1 Features Low Collector Saturation Voltage VCE(sat)... See More ⇒
Detailed specifications: 2SB792, 2SB793, 2SB793A, 2SB794, 2SB795, 2SB796, 2SB798, 2SB798DK, BC337, 2SB798DM, 2SB799, 2SB799MK, 2SB799ML, 2SB799MM, 2SB80, 2SB800, 2SB800FK
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