2SB798DL Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB798DL
SMD Transistor Code: DL
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 160 °C
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 36 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SOT89
2SB798DL Transistor Equivalent Substitute - Cross-Reference Search
2SB798DL Datasheet (PDF)
2sb798dl 2sb798dk.pdf
2SB798PNP-Silicon General use Transistors4 1W 1.0A25V 32 1 2 1 3SOT-89 ApplicationsCan be used for switching and amplifying in various 1 Base 2/4 Collector 3 Emitter electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-
2sb798.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB798 P NP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)
2sb798.pdf
SMD Type TransistorsPNP Transistors2SB7981.70 0.1 Features Low Collector Saturation Voltage: VCE(sat)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
