All Transistors. 2N1613-46 Datasheet

 

2N1613-46 Datasheet and Replacement


   Type Designator: 2N1613-46
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO46
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2N1613-46 Datasheet (PDF)

 8.1. Size:665K  rca
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2N1613-46

 8.2. Size:51K  philips
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2N1613-46

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt

 8.3. Size:64K  central
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2N1613-46

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.4. Size:224K  cdil
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2N1613-46

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Emitter Voltage (RBE

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Datasheet: 2N1608 , 2N1609 , 2N160A , 2N161 , 2N1610 , 2N1611 , 2N1612 , 2N1613 , TIP142 , 2N1613A , 2N1613B , 2N1613L , 2N1613S , 2N1614 , 2N1615 , 2N1616 , 2N1616-1 .

History: STD123S | MCH3245 | 3DG161 | 2SC518A | 2N6673 | MRF5812 | DTC124XK

Keywords - 2N1613-46 transistor datasheet

 2N1613-46 cross reference
 2N1613-46 equivalent finder
 2N1613-46 lookup
 2N1613-46 substitution
 2N1613-46 replacement

 

 
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