2SB815B6 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB815B6
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO236
2SB815B6 Transistor Equivalent Substitute - Cross-Reference Search
2SB815B6 Datasheet (PDF)
2sb815 2sd1048.pdf
Ordering number : ENN694F2SB815 / 2SD1048PNP / NPN Epitaxial Planar Silicon Transistors2SB815 / 2SD1048General-Purpose AF Amplifier ApplicationsFeaturesPackage Dimensions Ultrasmall package allows miniaturizationunit : mmin end products.2018B Large current capacity (IC=0.7A) and low-saturation[2SB815 / 2SD1048]voltage.0.40.1630 to 0.11 0.95 0.95 21.9
2sb815 2sd1048.pdf
Ordering number : EN694H2SB815/2SD1048Bipolar Transistorhttp://onsemi.com() () ( ) ( )15V, 0.7A, Low VCE sat , PNP NPN Single CPFeatures Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage( ): 2SB815Specifications Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCol
2sb815.pdf
SMD Type TransistorsPNP Transistors2SB815SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 Large current capacity (IC=0.7A) and low-saturation voltage. Complimentary to 2SD1048.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
