2SB824R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB824R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SB824R Transistor Equivalent Substitute - Cross-Reference Search
2SB824R Datasheet (PDF)
2sb824.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SD1060 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting
2sb824.pdf
isc Silicon PNP Power Transistor 2SB824DESCRIPTIONHigh Collector Current: I = -5ACLow Collector Saturation Voltage: V = -0.4V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1060APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other gereral large-current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
