2SB827Q Specs and Replacement
Type Designator: 2SB827Q
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO218
2SB827Q Substitution
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2SB827Q datasheet
Ordering number 688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO. 1 Base 2 Co... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB827 DESCRIPTION With TO-3PN package Complement to type 2SD1063 Wide area of safe operation Low collector-emitter saturation voltage VCE(sat)=( )0.4V max. APPLICATIONS Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Col... See More ⇒
isc Silicon PNP Power Transistor 2SB827 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Universal high current switching as solenoid driving, high speed i... See More ⇒
Detailed specifications: 2SB825Q, 2SB825R, 2SB825S, 2SB826, 2SB826Q, 2SB826R, 2SB826S, 2SB827, 2SD669, 2SB827R, 2SB827S, 2SB828, 2SB828Q, 2SB828R, 2SB828S, 2SB829, 2SB829Q
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