All Transistors. 2N1616-1 Datasheet

 

2N1616-1 Datasheet and Replacement


   Type Designator: 2N1616-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO61
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2N1616-1 Datasheet (PDF)

 8.1. Size:22K  semelab
 2n1616.pdf pdf_icon

2N1616-1

2N1616MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO61 Hermetic Package High Current Switching LF Large Signal Amplification TO61 Metal Package.Pin 1 Emitter Pin 2 Base Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless

 9.1. Size:665K  rca
 2n1613.pdf pdf_icon

2N1616-1

 9.2. Size:51K  philips
 2n1613.pdf pdf_icon

2N1616-1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt

 9.3. Size:64K  central
 2n1613 2n1711 2n1893.pdf pdf_icon

2N1616-1

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Datasheet: 2N1613-46 , 2N1613A , 2N1613B , 2N1613L , 2N1613S , 2N1614 , 2N1615 , 2N1616 , BD777 , 2N1616A , 2N1617 , 2N1617-1 , 2N1617A , 2N1618 , 2N1618-1 , 2N1618A , 2N1619 .

History: FMMT2369 | NKT3703 | DTC124T | MPSW51ARLRAG | BCV72R | KT920B | 2SD1840

Keywords - 2N1616-1 transistor datasheet

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 2N1616-1 equivalent finder
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