2N1618A Datasheet and Replacement
Type Designator: 2N1618A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO61
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2N1618A Datasheet (PDF)
2n1618.pdf

2N1618SEMELABMECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO61 Hermetic Package High Current Switching LF Large Signal Amplification TO61 Metal Package.Pin 1 Emitter Pin 2 Base Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 2
2n1613.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt
2n1613 2n1711 2n1893.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
Datasheet: 2N1616 , 2N1616-1 , 2N1616A , 2N1617 , 2N1617-1 , 2N1617A , 2N1618 , 2N1618-1 , TIP41 , 2N1619 , 2N161A , 2N162 , 2N1620 , 2N1620-1 , 2N1621 , 2N1622 , 2N1623 .
History: GES3053 | 2N3183 | MM4019 | 2N2473 | BF420A | BTB1424AT3 | 2SB1144S
Keywords - 2N1618A transistor datasheet
2N1618A cross reference
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History: GES3053 | 2N3183 | MM4019 | 2N2473 | BF420A | BTB1424AT3 | 2SB1144S



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