All Transistors. 2SB889 Datasheet

 

2SB889 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB889

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO126

2SB889 Transistor Equivalent Substitute - Cross-Reference Search

 

2SB889 Datasheet (PDF)

5.1. 2sb883 2sd1193.pdf Size:118K _update

2SB889
2SB889



5.2. 2sb888.pdf Size:72K _sanyo

2SB889
2SB889

Ordering number:915C PNP Epitaxial Planar Silicon Darlington Transistor 2SB888 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit:mm votlage regulator control. 2003A [2SB888] Features High DC current gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage : VCE(sat)=0.8V typ. JEDEC :

 5.3. 2sb887.pdf Size:183K _jmnic

2SB889
2SB889

JMnic Product Specification Silicon PNP Power Transistors 2SB887 DESCRIPTION ·With TO-3PN package ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Motor drivers, printer ·Hammer drivers ·Relay drivers, ·Voltage regulator control PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting

5.4. 2sb886.pdf Size:152K _jmnic

2SB889
2SB889

JMnic Product Specification Silicon PNP Power Transistors 2SB886 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD1196 ·DARLINGTON ·High DC current gain ·High current capacity and wide ASO ·Low saturation voltage APPLICATIONS ·Motor drivers, printer ·Hammer drivers ·Relay drivers, ·Voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collec

 5.5. 2sb885.pdf Size:151K _jmnic

2SB889
2SB889

JMnic Product Specification Silicon PNP Power Transistor 2SB885 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1195 APPLICATIONS ·For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mou

5.6. 2sb887.pdf Size:151K _inchange_semiconductor

2SB889
2SB889

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB887 DESCRIPTION ·With TO-3PN package ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Motor drivers, printer ·Hammer drivers ·Relay drivers, ·Voltage regulator control PINNING PIN DESCRIPTION 1 Base Collector;connected

5.7. 2sb886.pdf Size:118K _inchange_semiconductor

2SB889
2SB889

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB886 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD1196 ·DARLINGTON ·High DC current gain ·High current capacity and wide ASO ·Low saturation voltage APPLICATIONS ·Motor drivers, printer ·Hammer drivers ·Relay drivers, ·Voltage regulator control. PINNING PIN DESCRIPTION

5.8. 2sb880.pdf Size:232K _inchange_semiconductor

2SB889
2SB889

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB880 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1190 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drive

5.9. 2sb885.pdf Size:118K _inchange_semiconductor

2SB889
2SB889

Inchange Semiconductor Product Specification Silicon PNP Power Transistor 2SB885 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1195 APPLICATIONS ·For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN DESCRIPTION 1 Base Collector;conne

5.10. 2sb884.pdf Size:265K _inchange_semiconductor

2SB889
2SB889

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB884 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= -1.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD1194 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay d

Datasheet: 2SB881 , 2SB882 , 2SB883 , 2SB884 , 2SB885 , 2SB886 , 2SB887 , 2SB888 , 2N3563 , 2SB89 , 2SB890 , 2SB891 , 2SB892 , 2SB892R , 2SB892S , 2SB892T , 2SB892U .

 
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