2N1619 Datasheet and Replacement
Type Designator: 2N1619
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO61
2N1619 Substitution
2N1619 Datasheet (PDF)
2n1613.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt
2n1613 2n1711 2n1893.pdf

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2n1616.pdf

2N1616MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO61 Hermetic Package High Current Switching LF Large Signal Amplification TO61 Metal Package.Pin 1 Emitter Pin 2 Base Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless
Datasheet: 2N1616-1 , 2N1616A , 2N1617 , 2N1617-1 , 2N1617A , 2N1618 , 2N1618-1 , 2N1618A , 2N5401 , 2N161A , 2N162 , 2N1620 , 2N1620-1 , 2N1621 , 2N1622 , 2N1623 , 2N1624 .
History: 2N710A | 2N1834 | ECG397 | 2N183 | 2SB1169 | 2N710 | SD168
Keywords - 2N1619 transistor datasheet
2N1619 cross reference
2N1619 equivalent finder
2N1619 lookup
2N1619 substitution
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History: 2N710A | 2N1834 | ECG397 | 2N183 | 2SB1169 | 2N710 | SD168



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