All Transistors. 2SB899 Datasheet

 

2SB899 Datasheet and Replacement


   Type Designator: 2SB899
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220
 

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2SB899 Datasheet (PDF)

 ..1. Size:184K  inchange semiconductor
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2SB899

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB899DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.2(Max.) @I = -3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and

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2SB899

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2SB899

 9.3. Size:77K  sanyo
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2SB899

Ordering number:1023CPNP Epitaxial Planar Silicon Transistor2SB893Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, strobes. unit:mm2003AFeatures [2SB893] Low saturation voltage : VCE(sat)0.45V (IC=1.5A, IB=0.15A). Large current capacity and wide ASO : IC max=2.5A.JEDEC : TO-92 B : Base

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - 2SB899 transistor datasheet

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