2SC100 Specs and Replacement
Type Designator: 2SC100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO50-1
- BJT ⓘ Cross-Reference Search
2SC100 datasheet
0.3. Size:78K secos
2sc1008.pdf 

2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Base Collector J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G B A... See More ⇒
0.4. Size:352K hua-yuan
2sc1008.pdf 

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR NPN TO 92 FEATURES 1.EMITTER Power dissipation PCM 0.8 W Tamb=25 2. BASE Collector current 3. COLLECTOR ICM 0.7 A Collector-base voltage 1 2 3 V(BR)CBO ... See More ⇒
0.5. Size:111K jiangsu
2sc1008.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-... See More ⇒
0.6. Size:346K wietron
2sc1008.pdf 

WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 80 A Collector Current ICM 0.7 Power Dissipation PCM 0.8 W -55 to +150 Junction Temperature TJ C -55 to +150 Tstg Storage Temperature C ELECTRICAL CHARACTE... See More ⇒
0.7. Size:1663K kexin
2sc1009.pdf 

SMD Type Transistors NPN Transistors 2SC1009 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto... See More ⇒
0.8. Size:221K inchange semiconductor
2sc1008.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1008 DESCRIPTION NPN high-voltage transistor Low current (max. 700 mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
0.9. Size:177K inchange semiconductor
2sc1004.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1004 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co... See More ⇒
Detailed specifications: 2SB992, 2SB993, 2SB994, 2SB995, 2SB996, 2SB997, 2SB998, 2SB999, 2N2907, 2SC1000, 2SC1000GTM, 2SC1001, 2SC1002, 2SC1003, 2SC1003A, 2SC1004, 2SC1004A
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