2SC1003 Datasheet and Replacement
Type Designator: 2SC1003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO62
2SC1003 Datasheet (PDF)
2sc1008-g-o-y-r.pdf

2SC1008-RMCC2SC1008-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1008-YCA 91311Phone: (818) 701-49332SC1008-GFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistor
2sc1008.pdf

2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitterBase CollectorJCLASSIFICATION OF hFE A DMillimeterREF. Min. Max.Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-GBA
2sc1008.pdf

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTORNPN TO92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 WTamb=25 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: FCG93AX | TN3691 | KT685V | DTD163TA | BD827-10 | KT214D9 | BFX58II
Keywords - 2SC1003 transistor datasheet
2SC1003 cross reference
2SC1003 equivalent finder
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History: FCG93AX | TN3691 | KT685V | DTD163TA | BD827-10 | KT214D9 | BFX58II



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