2SC1008A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1008A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO18
2SC1008A Transistor Equivalent Substitute - Cross-Reference Search
2SC1008A Datasheet (PDF)
2sc1008-g-o-y-r.pdf
2SC1008-RMCC2SC1008-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1008-YCA 91311Phone: (818) 701-49332SC1008-GFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistor
2sc1008.pdf
2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitterBase CollectorJCLASSIFICATION OF hFE A DMillimeterREF. Min. Max.Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-GBA
2sc1008.pdf
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTORNPN TO92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 WTamb=25 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO
2sc1008.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-
2sc1008.pdf
WEITRON2SC1008NPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92MAXIMUM RATINGS (T unless otherwise noted)A=25CParameter Symbol Value UnitsCollector-Base Voltage VVCBO 80ACollector Current ICM 0.7Power Dissipation PCM 0.8 W-55 to +150Junction Temperature TJ C-55 to +150TstgStorage Temperature CELECTRICAL CHARACTE
2sc1008.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1008DESCRIPTIONNPN high-voltage transistorLow current (max. 700 mA)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationin high voltage applications , such as telephonyapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N4002 | BSY56 | 3DG1741S | 2SC1085 | 3DD6E-T | 2N2988 | BSZ10
History: 2N4002 | BSY56 | 3DG1741S | 2SC1085 | 3DD6E-T | 2N2988 | BSZ10
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050