2SC101 Datasheet. Specs and Replacement
Type Designator: 2SC101
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO66
2SC101 Substitution
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2SC101 datasheet
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Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 ... See More ⇒
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Em... See More ⇒
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5 17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-20... See More ⇒
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WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 80 A Collector Current ICM 0.7 Power Dissipation PCM 0.8 W -55 to +150 Junction Temperature TJ C -55 to +150 Tstg Storage Temperature C ELECTRICAL CHARACTE... See More ⇒
SMD Type Transistors NPN Transistors 2SC1009 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto... See More ⇒
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1008 DESCRIPTION NPN high-voltage transistor Low current (max. 700 mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1050 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purpose ABSOLUTE MAXIMUM RATI... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1080 DESCRIPTION With TO-3 Package High power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 110 V CBO... See More ⇒
isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION Low Collector Saturation Voltage- V = 1.0(V)(Max)@ I = 2A CE(sat) C DC Current Gain- h = 35-320 @ I = 0.5A FE C Complement to Type 2SA671 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RA... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1004 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co... See More ⇒
isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION With TO-220 package Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers A... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5 17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outl... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN DESCRIPTION 1 Base... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1034 DESCRIPTION DC Current Gain -h = 4(Min)@ I = 0.75A FE C Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1051 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low frequency power amplifier and large power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1024 DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM R... See More ⇒
isc Silicon NPN Power Transistor 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltag Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1079 DESCRIPTION With TO-3 Package High power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO... See More ⇒
Detailed specifications: 2SC1008A, 2SC1009, 2SC1009A, 2SC1009F1, 2SC1009F2, 2SC1009F3, 2SC1009F4, 2SC1009F5, 2N5551, 2SC1010, 2SC1011, 2SC1012, 2SC1012A, 2SC1013, 2SC1014, 2SC1015, 2SC1016
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