All Transistors. 2SC1029 Datasheet

 

2SC1029 Datasheet and Replacement


   Type Designator: 2SC1029
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 12 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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2SC1029 Datasheet (PDF)

 8.1. Size:160K  jmnic
 2sc1027.pdf pdf_icon

2SC1029

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute

 8.2. Size:181K  inchange semiconductor
 2sc1024.pdf pdf_icon

2SC1029

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1024DESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM R

 8.3. Size:208K  inchange semiconductor
 2sc1027.pdf pdf_icon

2SC1029

isc Silicon NPN Power Transistor 2SC1027DESCRIPTIONWith TO-3 packageHigh power dissipationLow collector saturation voltagMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

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History: MMBT4122 | 2N1082 | 2SA1051A | 2SA843 | LDTA114EM3T5G | 2SB464 | 2N1963

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