2SC1036
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1036
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 15
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 0.02
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 350
MHz
Collector Capacitance (Cc): 0.7
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO72
2SC1036
Transistor Equivalent Substitute - Cross-Reference Search
2SC1036
Datasheet (PDF)
8.2. Size:44K jmnic
2sc1030.pdf
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC
8.3. Size:181K inchange semiconductor
2sc1034.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1034DESCRIPTIONDC Current Gain -h = 4(Min)@ I = 0.75AFE CCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.