All Transistors. 2SC1045C Datasheet

 

2SC1045C Datasheet and Replacement


   Type Designator: 2SC1045C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 550 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO3
 

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2SC1045C Datasheet (PDF)

 8.1. Size:39K  sanyo
 2sc1046.pdf pdf_icon

2SC1045C

 8.2. Size:60K  panasonic
 2sc1047 e.pdf pdf_icon

2SC1045C

Transistor2SC1047Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V 1.27 1.27Collector to emitter voltage VCEO 20

 8.3. Size:56K  panasonic
 2sc1047.pdf pdf_icon

2SC1045C

Transistor2SC1047Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V 1.27 1.27Collector to emitter voltage VCEO 20

 8.4. Size:176K  inchange semiconductor
 2sc1046.pdf pdf_icon

2SC1045C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1046DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSfor use in horizontal deflection output stages forcolor TV receivesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

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Keywords - 2SC1045C transistor datasheet

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